Iodine Adsorption on Arrays, Clusters, and Pairs of Reactive Sites on the Si(100) Surface

被引:8
作者
Ferng, Shyh-Shin [1 ]
Lin, Deng-Sung [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
关键词
SCANNING-TUNNELING-MICROSCOPY; ELECTRONIC-STRUCTURE; BUCKLED DIMERS; CHEMISORPTION; DISSOCIATION; DEFECTS; DENSITY; O-2;
D O I
10.1021/jp211439d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Isolated, paired, and clustered dangling bonds are prepared on a Si(100) surface as well-defined chemically reactive sites for chemisorption of iodine diatomic molecules. The surrounding dangling bonds around a designed reactant configuration are passivated by hydrogen- and iodine-termination. Following exposure to I-2 at room temperature, the adsorbate configurations on these reactive sites have been examined using scanning tunneling microscopy (STM). On clean Si(100), three types (type-I, type-II, and type-M) of adsorption pathways have been identified, consistent with previous findings. The results from H- and I-masked Si(100) show that at least two dangling bonds in the same row and in close proximity (<4 angstrom) are needed to trigger chemisorption and that dissociative adsorption is the dominant mechanism. Contrary to its major role on clean Si(100), type-II adsorption is not observed when the two needed dangling bonds are surrounded by H-adatoms. These findings indicate that a seemingly simple chemisorption reaction on reactive sites involves not only the sites themselves but also the relevant surrounding bonds and adatoms.
引用
收藏
页码:3091 / 3096
页数:6
相关论文
共 30 条
[1]  
[Anonymous], 2007, COMPREHENSIVE HDB CH, DOI [10.1201/9781420007282, DOI 10.1201/9781420007282]
[2]   Dissociation of O2 at Al(111):: The role of spin selection rules -: art. no. 036104 [J].
Behler, J ;
Delley, B ;
Lorenz, S ;
Reuter, K ;
Scheffler, M .
PHYSICAL REVIEW LETTERS, 2005, 94 (03)
[3]   Dissociative adsorption of H2 on Si(100) induced by atomic H [J].
Biedermann, A ;
Knoesel, E ;
Hu, Z ;
Heinz, TF .
PHYSICAL REVIEW LETTERS, 1999, 83 (09) :1810-1813
[4]   Abstractive chemisorption of O2 on Al(111) [J].
Binetti, M ;
Weisse, O ;
Hasselbrink, E ;
Komrowski, AJ ;
Kummel, AC .
FARADAY DISCUSSIONS, 2000, 117 :313-320
[5]   Electronic structure of partially hydrogenated Si(100)-(2 x 1) surfaces prepared by thermal and nonthermal desorption [J].
Bobrov, K ;
Comtet, G ;
Dujardin, G ;
Hellner, L .
PHYSICAL REVIEW LETTERS, 2001, 86 (12) :2633-2636
[6]   SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES [J].
BOLAND, JJ .
ADVANCES IN PHYSICS, 1993, 42 (02) :129-171
[7]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[8]   Chlorine on Si(001)-(2x1): Bridge versus terminal bonding [J].
deWijs, GA ;
Selloni, A .
PHYSICAL REVIEW LETTERS, 1996, 77 (05) :881-884
[9]   Mediation of chain reactions by propagating radicals during halogenation of H-masked Si(100): Implications for atomic-scale lithography and processing [J].
Ferng, Shyh-Shin ;
Wu, Shiao-Ting ;
Lin, Deng-Sung ;
Chiang, Tai C. .
JOURNAL OF CHEMICAL PHYSICS, 2009, 130 (16)
[10]   Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K) [J].
Hata, K ;
Ozawa, S ;
Sainoo, Y ;
Miyake, K ;
Shigekawa, H .
SURFACE SCIENCE, 2000, 447 (1-3) :156-164