Structural phase transitions in nanosized ferroelectric barium strontium titanate films

被引:20
作者
Golovko, Yu. I. [1 ]
Mukhortov, V. M. [1 ]
Yuzyuk, Yu. I. [2 ]
Janolin, P. E. [3 ]
Dkhil, B. [3 ]
机构
[1] Russian Acad Sci, So Sci Ctr, Rostov Na Donu 344006, Russia
[2] So Fed Univ, Rostov Na Donu 344090, Russia
[3] Ecole Cent Paris, LSPMS, UMR 8580, F-92295 Chatenay Malabry, France
关键词
D O I
10.1134/S1063783408030153
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The lattice parameters of epitaxial barium strontium titanate films with various thicknesses (from 6 to 960 nm) were measured as a function of temperature in the normal and tangential directions with respect to the film plane using x-ray diffraction. The films were grown through the layer-by-layer mechanism by rf cathode sputtering under elevated oxygen pressure. A critical film thickness (similar to 50 nm) was found to exist, below and above which the films are subjected to compressive and tensile stresses, respectively. As the temperature varies from 780 to 100 K, the films undergo two diffuse structural phase transitions of the second order over the entire thickness range. The transitions in the films under tensile stresses are likely to be transformations from the paraelectric tetragonal to aa phase and then to r phase, whereas the transitions under compressive stresses are transformations from the tetragonal paraelectric to ferroelectric c phase and then, with further decreasing temperature, to r phase.
引用
收藏
页码:485 / 489
页数:5
相关论文
共 20 条
  • [1] A new high performance phase shifter using BaxSr1-xTiO3 thin films
    Acikel, B
    Taylor, TR
    Hansen, PJ
    Speck, JS
    York, RA
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (07) : 237 - 239
  • [2] Phase diagrams and dielectric response of epitaxial barium strontium titanate films: A theoretical analysis
    Ban, ZG
    Alpay, SP
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9288 - 9296
  • [3] Directionally dependent ferroelectric phase transition order of anisotropic epitaxial BaxSr1-xTiO3 thin films -: art. no. 012902
    Bellotti, JA
    Chang, WT
    Qadri, SB
    Kirchoefer, SW
    Pond, JM
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (01)
  • [4] Ferroelectric transition in an epitaxial barium titanate thin film: Raman spectroscopy and x-ray diffraction study
    El Marssi, M
    Le Marrec, F
    Lukyanchuk, IA
    Karkut, MG
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 3307 - 3312
  • [5] Lattice strain in epitaxial BaTiO3 thin films
    He, FZ
    Wells, BO
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [6] Hoerman BH, 2002, PHYS REV B, V65, DOI 10.1103/PhysRevB.65.224110
  • [7] Koukhar VG, 2001, PHYS REV B, V64, DOI [10.1103/PhysRevB.64.214103, 10.1103/PhysRevLett.87.214103]
  • [8] Substrate-induced mechanical and dielectric properties of a ferroelectric thin film
    Lahoche, L
    Lorman, V
    Rochal, SB
    Roelandt, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) : 4973 - 4982
  • [9] Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films
    Li, H
    Roytburd, AL
    Alpay, SP
    Tran, TD
    Salamanca-Riba, L
    Ramesh, R
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2354 - 2356
  • [10] Effects of poling, and implications for metastable phase behavior in barium strontium titanate thin film capacitors
    Lookman, A
    McAneney, J
    Bowman, RM
    Gregg, JM
    Kut, J
    Rios, S
    Ruediger, A
    Dawber, M
    Scott, JF
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 5010 - 5012