Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer

被引：7
作者：
Peng, Ruoshi [1 ]
Xu, Shengrui [1 ]
Fan, Xiaomeng [1 ]
Su, Huake [1 ]
Tao, Hongchang [1 ]
Gao, Yuan [1 ]
Zhang, Jincheng [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Peoples R China
来源：
OPTICS LETTERS | 2022年 / 47卷 / 16期
基金：
中国国家自然科学基金;
关键词：
QUANTUM-WELL; TEMPERATURE; VOLTAGE; LEDS;
D O I：
10.1364/OL.468800
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The introduction of an in situ C-doped GaN layer in green light-emitting diodes (LEDs) is successfully realized by optimizing the temperature of the GaN growth process. The C-doped GaN film acts as a current spreading layer for green LEDs, allowing for a more uniform current distribution and consequently an increase in luminous efficiency. At the same time, the insertion of a C-doped GaN layer does not lead to the degradation of the surface morphology as well as the crystalline quality. Electroluminescence results show that the C-doped GaN layer grown at 850 degrees C is appropriate to be used in green LEDs. (C) 2022 Optica Publishing Group
引用
收藏
页码：4139 / 4142
页数：4
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