28NM HIGH DENSITY SRAM BIT CELL DESIGN AND MANUFACTURE STUDY

被引：0

作者：

Hu, Meili ^{[1
]}

Song, Lijun

Wu, Lei

机构：

[1] SMIC ATD, Div Design Technol Cooptimizat, Shanghai 201203, Peoples R China

来源：

2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年

关键词：

SRAM; 28nm; AA formation; MG; VMIN yield;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

SRAM is a basic component in logic circuit. To qualify 28nm technology, 0.127cm(2) high-density SRAM is chosen as a factor. To get good nominal and VMIN yield, some key processes need to focus on. For examples, Active Area formation, Gate dielectric process and MG (metal gate) boundary. This paper will give study result for these three key steps to improve SRAM yield.

引用

页数：3