Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy

被引：0

作者：

García-Rocha, M ^{[1
]}

Hernández-Calderón, I ^{[1
]}

机构：

[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07000, DF, Mexico

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

atomic layer epitaxy; photoluminescence of quantum wells; II-VI quantum wells; CdTe/ZnTe quantum wells; molecular beam epitaxy; utlra-thin quantum wells; II-VI nanostructures;

D O I：

10.1117/12.511513

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

CdTe ultra-thin quantum wells (UTQWs) within ZnTe barriers were grown by pulsed beam epitaxy (PBE) on GaAs(001) substrates. In-situ reflection high energy electron diffraction (RHEED) patterns and real-time spot intensity measurements indicated a high structural quality of the QWs. Low temperature photoluminescence (PL) experiments indicated a clear influence of the growth temperature on the structural properties of the samples. The 2 monolayer (ML) thick UTQW grown at T-s = 270 degreesC exhibited an intense and sharp peak at 2.26 eV whereas the 4 ML thick UTQW (T-s = 290 degreesC) presented an intense peak at 2.13 eV and a weak one around 2.04 eV. This behavior is discussed in terms of Cd re-evaporation at the higher T-s.

引用

页码：79 / 81

页数：3

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