Controlled modification of erbium lifetime in silicon dioxide with metallic overlayers

被引:19
作者
Bao, Jiming [1 ]
Yu, Nanfang
Capasso, Federico
Mates, Thomas
Troccoli, Mariano
Belyanin, Alexey
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Argos Tech, LLC, Santa Clara, CA 95051 USA
[4] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2785134
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report systematic measurements of the lifetime of the 1.54 mu m transition of erbium implanted at different energies in SiO2 films coated with different metals (titanium and chromium). The lifetime shows a strong reduction (up to a factor of 20) with decreasing distance between the erbium and the metal overlay. Their experiments combined with rigorous theoretical modeling demonstrate that a high degree of control over the radiative properties of erbium can be achieved in erbium-implanted materials in a wide range of implantation energies. (C) 2007 American Institute of Physics.
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页数:3
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