Light-emitting diodes from molecularly thin porphyrin derivative: Effect of molecular packing

被引:19
作者
Chowdhury, A
Chowdhury, J
Pal, P
Pal, AJ [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Calcutta 700032, W Bengal, India
[2] Indian Assoc Cultivat Sci, Dept Spect, Calcutta 700032, W Bengal, India
关键词
semiconductors; thin films; electronic transport; tunneling; luminescence;
D O I
10.1016/S0038-1098(98)00289-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Light-emitting diodes based on the molecularly thin him of a porphyrin derivative have been fabricated. Langmuir-Blodgett (LB) films at two different surface pressures have been used as active materials of the device and their characteristics have been studied and compared. Devices with LB films deposited at a higher pressure show rectifying behaviour and electroluminescence (EL) was observed only in the forward bias. The other type of devices with LB films deposited at a lower pressure, yields EL in both bias directions. The effect of thickness of the active layers has been investigated. The turn-on currents for both the cases have also been compared. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:725 / 729
页数:5
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