The influence of the InGaP window layer on the optical and electrical performance of GaAs solar cells

被引:49
作者
Pla, J.
Barrera, M.
Rubinelli, F.
机构
[1] Comis Nacl Energia Atom, Ctr Atom Constituyentes, Dept Fis, Grp Energis Solar, RA-1650 San Martin, De Buenos Aires, Argentina
[2] Consejo Nacl Invest Cient & Tecn, Natl Council Sci & Technol Res, RA-1033 Buenos Aires, DF, Argentina
[3] INTEC CONICET, Grp Fis Mat, RA-3000 Santa Fe, Argentina
关键词
D O I
10.1088/0268-1242/22/10/008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wide band gap heterolayer is usually added to the front face of GaAs and other III-V solar cells to favour transparency and to passivate the emitter. This extra front layer influences the optical behaviour of the device and therefore must be taken into account in the optimization of the antireflection (AR) coating. A set of AR layers was optimized with respect to their thicknesses for an InGaP front layer in GaAs solar cells. Complementary, numerical simulation of the whole device was performed using the D-AMPS code. Our results confirm the importance of surface passivation and demonstrate that the thickness of 30 nm usually proposed for this window layer is not the optimal.
引用
收藏
页码:1122 / 1130
页数:9
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