Ferroelectric Properties of Zn- and Ti-doped BiFeO3 Thin Films

被引：8

作者：

Lee, M. H. ^{[1
]}

Park, J. S. ^{[1
]}

Cho, H. J. ^{[1
]}

Kim, D. J. ^{[1
]}

Sung, Y. S. ^{[1
]}

Cho, J. H. ^{[1
]}

Kim, M-H. ^{[1
]}

Song, T. K. ^{[1
]}

Kim, W-J. ^{[2
]}

Do, D. ^{[2
]}

Choi, H. I. ^{[2
]}

Kim, S. S. ^{[2
]}

Choi, B. C. ^{[3
]}

机构：

[1] Changwon Natl Uniuniv, Sch Nano & Adv Mat Engn, Chang Won 641773, South Korea

[2] Changwon Natl Uniuniv, Dept Phys, Chang Won 641773, South Korea

[3] Pukyong Natl Univ, Dept Phys, Pusan 608737, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Ferroelectric; BiFeO3; Leakage current; Substitution; Orientation; LEAKAGE CURRENT; POLARIZATION; DIFFRACTION;

D O I：

10.3938/jkps.60.272

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

BiFeO3 (BFO), Ti-doped BFO (BFTO), and Zn-doped BFO (BFZO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using a pulsed laser deposition method. The effects of the substitution of Zn and Ti were investigated. Increased remnant polarization (P-r) and reduced coercive electric field (2E(c)) were observed in the BFZO thin film capacitor. The values of 2P(r) and 2E(c) of the BFO, BFZO, and BFTO films were 100 mu C/cm(2) and 678 kV/cm, 107 mu C/cm(2) and 540 kV/cm, and 100 mu C/cm(2) and 720 kV/cm, respectively. The measured leakage current density of the BFZO thin film was approximately two orders of magnitude lower than that of the BFO thin film.

引用

页码：272 / 275

页数：4

共 19 条

[1] Effect of La substitution on structural and electrical properties of BiFeO3 thin film [J].

Das, SR ;

Bhattacharya, P ;

Choudhary, RNP ;

Katiyar, RS .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (06)

[2] Effects of Bi Content on the Ferroelectric Properties of BiFeO3 Thin Films [J].

Do, Dalhyun ;

Kim, Jin Won ;

Kim, Sang Su ;

Kim, Won-Jeong ;

Lee, Myang Hwan ;

Song, Tae Kwon .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (06) :1875-1878

[3] Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures" [J].

Eerenstein, W ;

Morrison, FD ;

Dho, J ;

Blamire, MG ;

Scott, JF ;

Mathur, ND .

SCIENCE, 2005, 307 (5713) :1203-1203

[4] Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metal organic deposition method [J].

Huang, Fengzhen ;

Lu, Xiaomei ;

Lin, Weiwei ;

Wu, Xiumei ;

Kan, Yi ;

Zhu, Jinsong .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[5] NEUTRON-DIFFRACTION STUDY OF NUCLEAR AND MAGNETIC-STRUCTURE OF BIFEO3 [J].

JACOBSON, AJ ;

FENDER, BEF .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (06) :844-850

[6] Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition [J].

Kim, JK ;

Kim, SS ;

Kim, WJ ;

Bhalla, AS ;

Guo, R .

APPLIED PHYSICS LETTERS, 2006, 88 (13)

[7] Multiferroic Properties of Ti-doped BiFeO3 Ceramics [J].

Kim, S. J. ;

Han, S. H. ;

Kim, H. G. ;

Kim, A. Y. ;

Kim, J. S. ;

Cheon, C. I. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (01) :439-442

[8]

Kiselev SV., 1963, SOV PHYS DOKL, V7, P742

[9] Improvement of the Ferroelectric and the Leakage Current Properties with Mn Doping in BiFeO3 Thin Films [J].

Lee, M. H. ;

Lee, S. C. ;

Sung, Y. S. ;

Kim, M-H. ;

Song, T. K. ;

Kim, W-J. ;

Do, D. ;

Kim, S. S. ;

Cho, J. H. ;

Choi, B. C. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (06) :1901-1904

[10] Influence of La doping in multiferroic properties of BiFeO3 thin films -: art. no. 042903 [J].

Lee, YH ;

Wu, JM ;

Lai, CH .

APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3

← 1 2 →