Physics based fatigue compact model for ferroelectric capacitors

被引:0
|
作者
Gondro, E [1 ]
Kühn, C [1 ]
Schuler, F [1 ]
Kowarik, O [1 ]
机构
[1] Univ Bundeswehr, Inst Elect, D-85577 Neubiberg, Germany
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A physics based compact model describing the fatigue behavior of ferroelectric capacitors has been developed. Fatigue is a gradual decrease of detectable polarization with increasing number of polarization cycles. This can be caused by trapped charges which pin dipoles near the interface to the electrode. In order to polarize those pinned dipoles they have to be separated from the trapped charges by a higher electrical force. This force has been described in our model by additional coercive voltages representing the different polarization response of the dipoles in the interface region in contrast to those in the inner region of the ferroelectric capacitor. Our model has been implemented into a common-used circuit simulator showing good agreement with measurements.
引用
收藏
页码:615 / 618
页数:4
相关论文
共 50 条
  • [1] A Compact Model for Ferroelectric Capacitors Based on Multidomain Phase-Field Framework
    Adnaan, Mohammad
    Chang, Sou-Chi
    Li, Hai
    Nikonov, Dmitri
    Young, Ian A.
    Naeemi, Azad
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (07) : 3523 - 3529
  • [2] A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions
    Feng, Ning
    Li, Hao
    Zhang, Lining
    Ji, Ning
    Zhang, Fangxi
    Zhu, Xiaobao
    Shang, Zongwei
    Cai, Puyang
    Li, Ming
    Wang, Runsheng
    Huang, Ru
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (02) : 261 - 264
  • [3] Compact Physical Model for Ferroelectric/Antiferroelectric/Dielectric Mixed Phase Capacitors
    Adnaan, Mohammad
    Islam, Muhammad Mainul
    Chang, Sou-Chi
    Li, Hai
    Young, Ian A.
    Naeemi, Azad
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (02) : 280 - 283
  • [4] Compact model for PZT ferroelectric capacitors with voltage dependent switching behavior
    Wang, Chien-Wei
    Ku, Hansol
    Chiu, Cheng Yan
    De, Sourav
    Qiu, Bo-Han
    Shin, Changhwan
    Lu, Darsen
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (05)
  • [5] Polarization fatigue modeling of ferroelectric capacitors
    Nishimura, K
    IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (06): : 1334 - 1341
  • [6] Polarization fatigue of organic ferroelectric capacitors
    Zhao, Dong
    Katsouras, Ilias
    Li, Mengyuan
    Asadi, Kamal
    Tsurumi, Junto
    Glasser, Gunnar
    Takeya, Jun
    Blom, Paul W. M.
    de Leeuw, Dago M.
    SCIENTIFIC REPORTS, 2014, 4
  • [7] Polarization fatigue of organic ferroelectric capacitors
    Dong Zhao
    Ilias Katsouras
    Mengyuan Li
    Kamal Asadi
    Junto Tsurumi
    Gunnar Glasser
    Jun Takeya
    Paul W. M. Blom
    Dago M. de Leeuw
    Scientific Reports, 4
  • [8] A model of ferroelectric capacitors based on hysteresis loop
    Wang, LH
    Yu, J
    Wang, YB
    Peng, G
    Liu, F
    Gao, JX
    ACTA PHYSICA SINICA, 2005, 54 (02) : 949 - 954
  • [9] A physics-based compact model of ferroelectric tunnel junction for memory and logic design
    Wang, Zhaohao
    Zhao, Weisheng
    Kang, Wang
    Bouchenak-Khelladi, Anes
    Zhang, Yue
    Zhang, Youguang
    Klein, Jacques-Olivier
    Ravelosona, Dafine
    Chappert, Claude
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (04)
  • [10] A physics based model for accumulation MOS capacitors
    Otín, A
    Celma, S
    Aldea, C
    SOLID-STATE ELECTRONICS, 2004, 48 (05) : 773 - 779