GaAs Quantum Dots with Type-II Band Alignment

被引：0

作者：

Kuroda, T. ^{[1
]}

Mano, T. ^{[1
]}

Abbarchi, M. ^{[1
]}

Sakoda, K. ^{[1
]}

机构：

[1] NIMS, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

GaAs; quantum dots; type II; photoluminescence;

D O I：

10.1063/1.3666483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With use of droplet epitaxy we realized self-assembled GaAs quantum dots embedded in the AlGaAs barrier with the nominal aluminum concentration of 0.85. Time-resolved photoluminescence showed highly nonexponential decays, suggesting the distribution of recombination probability depending on the microscopic condition of each quantum dot. The mean decay time was found to be two orders of magnitude longer than that of the type-I GaAs/AlGaAs quantum dots with similar size and shape.

引用

页数：2

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