Conductivity and current-voltage characteristics of PZT thin-film heterostructures

被引：6

作者：

Kamenshchikov, M. V. ^{[1
]}

Solnyshkin, A. V. ^{[1
]}

Bogomolov, A. A. ^{[1
]}

Pronin, I. P. ^{[2
]}

机构：

[1] Tver State Univ, Tver 170100, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2011年 / 53卷 / 10期

关键词：

Applied Voltage; Voltage Characteristic; Charge Carrier Mobility; Schottky Emission; Semilogarithmic Scale;

D O I：

10.1134/S1063783411100155

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The conductivity of thin-film Pt/PZT/Pt structures has been studied using the method of current-voltage characteristics. The asymmetry of current-voltage characteristics has been revealed, which indicates that the potential barriers at the interfaces between the studied structures are different, and this asymmetry changes depending on the conditions of synthesis. It has been found that the current-voltage curve on semilogarithmic scales has several linear regions, which gives evidence that several mechanisms determine the conductivity of this structure. Two main conductivity mechanisms have been determined: ohmic mechanism and Frenkel-Poole emission. The conductivity of these structures increases with an increase in temperature, but the shape of the current-voltage characteristics remains unchanged.

引用

页码：2080 / 2084

页数：5

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