Conductivity and current-voltage characteristics of PZT thin-film heterostructures

被引：6
|
作者：
Kamenshchikov, M. V. [1 ]
Solnyshkin, A. V. [1 ]
Bogomolov, A. A. [1 ]
Pronin, I. P. [2 ]
机构：
[1] Tver State Univ, Tver 170100, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PHYSICS OF THE SOLID STATE | 2011年 / 53卷 / 10期
关键词：
Applied Voltage; Voltage Characteristic; Charge Carrier Mobility; Schottky Emission; Semilogarithmic Scale;
D O I：
10.1134/S1063783411100155
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The conductivity of thin-film Pt/PZT/Pt structures has been studied using the method of current-voltage characteristics. The asymmetry of current-voltage characteristics has been revealed, which indicates that the potential barriers at the interfaces between the studied structures are different, and this asymmetry changes depending on the conditions of synthesis. It has been found that the current-voltage curve on semilogarithmic scales has several linear regions, which gives evidence that several mechanisms determine the conductivity of this structure. Two main conductivity mechanisms have been determined: ohmic mechanism and Frenkel-Poole emission. The conductivity of these structures increases with an increase in temperature, but the shape of the current-voltage characteristics remains unchanged.
引用
收藏
页码：2080 / 2084
页数：5
相关论文
共 50 条
  • [31] Analytical current-voltage model for polycrystalline silicon thin-film transistors
    Kimura, M
    Takizawa, T
    Miyasaka, M
    Inoue, S
    Shimoda, T
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 79 - 84
  • [32] Analytical current-voltage model for nanocrystalline silicon thin-film transistors
    Hatzopoulos, A. T.
    Pappas, I.
    Tassis, D. H.
    Arpatzanis, N.
    Dimitriadis, C. A.
    Templier, F.
    Oudwan, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (19)
  • [33] Nonlinear current-voltage behavior in PZT thin films
    Xiao, Mi
    Zhang, Weikang
    Zhang, Zebin
    Li, Shida
    Zhang, Ping
    Lan, Kuibo
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (05):
  • [34] Conductivity and barrier effects in thin-film PZT-based heterostructures, depending on the conditions of synthesis
    M. V. Kamenshchikov
    A. V. Solnyshkin
    A. A. Bogomolov
    I. P. Pronin
    Bulletin of the Russian Academy of Sciences: Physics, 2013, 77 (8) : 1035 - 1037
  • [35] THE FIELD-EFFECT MOBILITY AND THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
    MIKI, H
    TOBITA, T
    NAKANISHI, T
    KARIYA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A): : 2740 - 2741
  • [36] EFFECT OF MECHANICAL-STRESS ON CURRENT-VOLTAGE CHARACTERISTICS OF THIN-FILM POLYCRYSTALLINE DIAMOND SCHOTTKY DIODES
    ZHAO, G
    CHARLSON, EM
    CHARLSON, EJ
    STACY, T
    MEESE, JM
    POPOVICI, G
    PRELAS, M
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1832 - 1837
  • [37] Current-voltage characteristics and quantum efficiency spectra of efficient thin-film CdS/CdTe solar cells
    Kosyachenko, Leonid
    Toyama, Toshihiko
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 120 : 512 - 520
  • [38] FIELD-DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF THIN-FILM YBACUO AT LOW MAGNETIC-FIELDS
    ROBERTS, J
    HERMANN, BA
    KARAPETROV, G
    TOM, DW
    SPOFFORD, A
    TATE, J
    PHYSICA B, 1994, 194 (pt 2): : 1889 - 1890
  • [39] Nonsymmetric current-voltage characteristics in ferromagnet/superconductor thin film structures
    Touitou, N
    Bernstein, P
    Hamet, JF
    Simon, C
    Méchin, L
    Contour, JP
    Jacquet, E
    APPLIED PHYSICS LETTERS, 2004, 85 (10) : 1742 - 1744
  • [40] Nonlinear current-voltage curves for thin-film gas-sensitive structures
    Simakov, VV
    RUSSIAN JOURNAL OF ELECTROCHEMISTRY, 2005, 41 (06) : 653 - 654
12345