The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices

被引：6
作者：
Ghidoni, C
Magri, R
Ossicini, S
机构：
[1] Univ Modena & Reggio Emilia, Ist Nazl Fis Mat, I-41100 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy
来源：
SURFACE SCIENCE | 2001年 / 489卷 / 1-3期
关键词：
density functional calculation; quantum wells; superlattices;
D O I：
10.1016/S0039-6028(01)01128-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We study using first-principle calculations the electronic and optical properties of In0.5Ga0.5As/InP and In0.5Al0.5As/InP superlattices, where the InGaAs and InAlAs alloys are described through an appropriate ordered ternary structure. The calculated electronic properties show that the substitution of Ga with Al originate an opening of the band gap from the infrared to the near visible and a transformation of the band alignment from type I to type II. Through the analysis of the optical properties we discuss successfully the giant polarization anisotropy observed in these systems. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：59 / 71
页数：13
相关论文
共 40 条
[1]   PHOTOLUMINESCENCE FROM ALLNAS/INP QUANTUM WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
AINA, L ;
MATTINGLY, M ;
STECKER, L .
APPLIED PHYSICS LETTERS, 1988, 53 (17) :1620-1622
[2]   HIGH MOBILITY ALINAS/INP HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
AINA, L ;
MATTINGLY, M ;
BURGESS, M ;
POTTER, R ;
OCONNOR, JM .
APPLIED PHYSICS LETTERS, 1991, 59 (12) :1485-1487
[3]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[4]   BAND OFFSETS AND TRANSITIVITY OF IN1-XGAXAS/IN1-YALYAS/INP HETEROSTRUCTURES [J].
BOHRER, J ;
KROST, A ;
WOLF, T ;
BIMBERG, D .
PHYSICAL REVIEW B, 1993, 47 (11) :6439-6443
[5]   RESPONSES OF INP/GA0.47IN0.53AS/INP HETEROJUNCTION BIPOLAR-TRANSISTORS TO 1530 AND 620 NM ULTRAFAST OPTICAL PULSES [J].
CARRUTHERS, TF ;
DULING, IN ;
AINA, O ;
MATTINGLY, M ;
SERIO, M .
APPLIED PHYSICS LETTERS, 1991, 59 (03) :327-329
[6]   DIPOLE EFFECTS AND BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1988, 37 (09) :4528-4538
[7]   A new polarization-insensitive 1.55-μm InGaAs(P)-InGaAsP multiquantum-well electroabsorption modulator using a strain-compensating layer [J].
Chung, KH ;
Shim, JI .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (05) :730-736
[8]   First-principles optical properties of Si/CaF2 multiple quantum wells [J].
Degoli, E ;
Ossicini, S .
PHYSICAL REVIEW B, 1998, 57 (23) :14776-14782
[9]   LOW-LOSS MULTIPLE QUANTUM WELL GAINAS INP OPTICAL WAVE-GUIDES [J].
DERI, RJ ;
KAPON, E ;
BHAT, R ;
SETO, M ;
KASH, K .
APPLIED PHYSICS LETTERS, 1989, 54 (18) :1737-1739
[10]   Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers [J].
Dorren, BHP ;
Silov, AY ;
Leys, MR ;
Haverkort, JEM ;
Wolter, JH .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2331-2335
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