Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates

被引：23

作者：

Hirayama, Hideki ^{[1
,2
,3
]}

Norimatsu, Jun ^{[1
,2
,3
]}

Noguchi, Norimichi ^{[1
,2
,3
]}

Fujikawa, Sachie ^{[1
,2
,3
]}

Takano, Takayoshi ^{[1
,4
]}

Tsubaki, Kenji ^{[1
,4
]}

Kamata, Norihiko ^{[2
,3
]}

机构：

[1] RIKEN, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[2] Saitama Univ, Sakura Ku, Saitama, Saitama 3888570, Japan

[3] JST, CREST, Kawaguchi, Saitama 3220012, Japan

[4] Matsushita Elect Works Ltd, Osaka 5718686, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

LIGHT-EMITTING-DIODES; LOW-DISLOCATION-DENSITY; VAPOR-PHASE EPITAXY; SUPERLATTICE; OPERATION; SAPPHIRE; EMISSION;

D O I：

10.1002/pssc.200880959

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated CW milliwatt power operations of 270 nm-band AlGaN multi-quantum well (MQW) deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer was grown directly on sapphire by using ammonia (NH3) pulse-flow multilayer (ML) growth method. An AlN stripe structure with a width of 5 mu m and a spacing of 3 mu m was completely coalesced after the growth of an approximately 15 mu m-thick ELO-AlN layer grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The edge-type threading dislocation density (TDD) of the wing region of the ELO-AlN layer was 3x10(8) cm(-2), as observed by cross-sectional transmission electron microscope (TEM) image. The maximum output power of 2.7 mW was obtained from an AlGaN MQW LED with emission wavelength at 273 nm fabricated on ELO-AlN template under room temperature (RT) CW operation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S474 / S477

页数：4

共 19 条

[1] 250 nm AlGaN light-emitting diodes [J].

Adivarahan, V ;

Sun, WH ;

Chitnis, A ;

Shatalov, M ;

Wu, S ;

Maruska, HP ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2175-2177

[2] Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN [J].

Adivarahan, Vinod ;

Fareed, Qhalid ;

Islam, Monirul ;

Katona, Thomas ;

Krishnan, Balakrishnan ;

Khan, Asif .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40) :L877-L879

[3] AlGaN/GaN quantum well ultraviolet light emitting diodes [J].

Han, J ;

Crawford, MH ;

Shul, RJ ;

Figiel, JJ ;

Banas, M ;

Zhang, L ;

Song, YK ;

Zhou, H ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1688-1690

[4] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes [J].

Hirayama, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[5] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates [J].

Hirayama, H ;

Akita, K ;

Kyono, T ;

Nakamura, T ;

Ishibashi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (10A) :L1241-L1243

[6] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AIN buffer with reduced threading dislocation density [J].

Hirayama, Hideki ;

Noguchi, Norimichi ;

Yatabe, Tohru ;

Kamata, Norihiko .

APPLIED PHYSICS EXPRESS, 2008, 1 (05) :0511011-0511013

[7] 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire [J].

Hirayama, Hideki ;

Yatabe, Tohru ;

Noguchi, Norimichi ;

Ohashi, Tomoaki ;

Kamata, Norihiko .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :2969-+

[8] 231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire [J].

Hirayama, Hideki ;

Yatabe, Tohru ;

Noguchi, Norimichi ;

Ohashi, Tomoaki ;

Kamata, Norihiko .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[9] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate [J].

Iida, K. ;

Watanabe, H. ;

Takeda, K. ;

Nagai, T. ;

Sumii, T. ;

Nagamatsu, K. ;

Kawashima, T. ;

Balakrishnan, K. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. ;

Bandoh, A. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2000-2004

[10] 350.9 nm UV laser diode grown on low-dislocation-density AlGaN [J].

Iida, K ;

Kawashima, T ;

Miyazaki, A ;

Kasugai, H ;

Mishima, S ;

Honshio, A ;

Miyake, Y ;

Iwaya, M ;

Kamiyama, S ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (4A) :L499-L500

← 1 2 →