Electrode-dependent electrical properties of metal/Nb-doped SrTiO3 junctions

被引:109
作者
Park, C. [1 ]
Seo, Y. [1 ]
Jung, J. [1 ]
Kim, D. -W. [2 ,3 ]
机构
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, Kyunggi Do, South Korea
[2] Ewha Womans Univ, Div Nano Sci, Seoul 120780, South Korea
[3] Ewha Womans Univ, Dept Phys, Seoul 120780, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2872707
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTiO3(001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I)-voltage (V) and capacitance (C)-V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions. (c) 2008 American Institute of Physics.
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页数:4
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共 21 条
[1]   Switching characteristics of Cu2O metal-insulator-metal resistive memory [J].
Chen, A. ;
Haddad, S. ;
Wu, Y. C. ;
Lan, Z. ;
Fang, T. N. ;
Kaza, S. .
APPLIED PHYSICS LETTERS, 2007, 91 (12)
[2]   Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications [J].
Choi, DH ;
Lee, D ;
Sim, H ;
Chang, M ;
Hwang, HS .
APPLIED PHYSICS LETTERS, 2006, 88 (08)
[3]   Metal/oxide interfacial reactions:: Oxidation of metals on SrTiO3 (100) and TiO2 (110) [J].
Fu, Q ;
Wagner, T .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (23) :11697-11705
[4]   Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions [J].
Fujii, T. ;
Kawasaki, M. ;
Sawa, A. ;
Kawazoe, Y. ;
Akoh, H. ;
Tokura, Y. .
PHYSICAL REVIEW B, 2007, 75 (16)
[5]   Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions [J].
Hikita, Y. ;
Kozuka, Y. ;
Susaki, T. ;
Takagi, H. ;
Hwang, H. Y. .
APPLIED PHYSICS LETTERS, 2007, 90 (14)
[6]   First-principles modeling of resistance switching in perovskite oxide material [J].
Jeon, Sang Ho ;
Park, Bae Ho ;
Lee, Jaichan ;
Lee, Bora ;
Han, Seungwu .
APPLIED PHYSICS LETTERS, 2006, 89 (04)
[7]   Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films [J].
Kim, Kyung Min ;
Choi, Byung Joon ;
Shin, Yong Cheol ;
Choi, Seol ;
Hwang, Cheol Seong .
APPLIED PHYSICS LETTERS, 2007, 91 (01)
[8]   Electrode influence on the transport through SrRuO3/Cr-doped SrZrO3/metal junctions [J].
Lee, Hwan-Soo ;
Bain, James A. ;
Choi, Sukwon ;
Salvador, Paul A. .
APPLIED PHYSICS LETTERS, 2007, 90 (20)
[9]   Electrical properties of epitaxial junctions between Nb:SrTiO3 and optimally doped, underdoped, and Zn-doped YBa2Cu3O7-δ -: art. no. 205333 [J].
Ramadan, W ;
Ogale, SB ;
Dhar, S ;
Fu, LF ;
Shinde, SR ;
Kundaliya, DC ;
Rao, MSR ;
Browning, ND ;
Venkatesan, T .
PHYSICAL REVIEW B, 2005, 72 (20)
[10]   Band offsets of wide-band-gap oxides and implications for future electronic devices [J].
Robertson, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1785-1791