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Preparation of few-layer graphene-capped boron nanowires and their field emission properties
被引:0
|作者:
Zhang, Yong-Xin
[1
]
Liu, Fei
[2
,3
]
Shen, Cheng-Min
[1
]
Yang, Tian-Zhong
[1
]
Li, Jun
[1
]
Deng, Shao-Zhi
[2
,3
]
Xu, Ning-Sheng
[2
,3
]
Gao, Hong-Jun
[1
]
机构:
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[2] Sun Yat Sen Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Sun Yat Sen Univ, Sch Microelect, Guangzhou 510275, Guangdong, Peoples R China
基金:
中国国家自然科学基金;
关键词:
boron nanowires;
graphene-capped boron nanowires;
field emission properties;
ELECTRON-EMISSION;
LASER-ABLATION;
SINGLE-LAYER;
FABRICATION;
NANOCONES;
ARRAYS;
NANOBELTS;
GROWTH;
D O I:
10.1088/1674-1056/25/7/078101
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5-10 mu m. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.
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页数:4
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