Preparation of few-layer graphene-capped boron nanowires and their field emission properties

被引：0
|
作者：
Zhang, Yong-Xin [1 ]
Liu, Fei [2 ,3 ]
Shen, Cheng-Min [1 ]
Yang, Tian-Zhong [1 ]
Li, Jun [1 ]
Deng, Shao-Zhi [2 ,3 ]
Xu, Ning-Sheng [2 ,3 ]
Gao, Hong-Jun [1 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[2] Sun Yat Sen Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[3] Sun Yat Sen Univ, Sch Microelect, Guangzhou 510275, Guangdong, Peoples R China
来源：
CHINESE PHYSICS B | 2016年 / 25卷 / 07期
基金：
中国国家自然科学基金;
关键词：
boron nanowires; graphene-capped boron nanowires; field emission properties; ELECTRON-EMISSION; LASER-ABLATION; SINGLE-LAYER; FABRICATION; NANOCONES; ARRAYS; NANOBELTS; GROWTH;
D O I：
10.1088/1674-1056/25/7/078101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Large-area boron nanowire (BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition (CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5-10 mu m. Then, graphene-capped boron nanowires (GC-BNWs) were obtained by microwave plasma chemical vapor deposition (MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.
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页数：4
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