Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment

被引：13

作者：

Pozzovivo, G. ^{[1
]}

Kuzmik, J. ^{[1
,2
]}

Giesen, C. ^{[3
]}

Heuken, M. ^{[3
]}

Liday, J. ^{[4
]}

Strasser, G. ^{[1
]}

Pogany, D. ^{[1
]}

机构：

[1] Univ Technol, Inst Solid State Elect, Floragasse 7, A-1040 Vienna, Austria

[2] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[3] AIXTRON AG, D-52072 Aachen, Germany

[4] Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

GAN SURFACES; ALGAN/GAN HEMTS; INDUCED DAMAGE; OPTIMIZATION; ALN;

D O I：

10.1002/pssc.200880839

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the effect of the surface treatments on the performance of Ti/Al/Ni/Au ohmic contacts to InAlN/GaN has been investigated by electrical characterization and by normalized Auger electron spectroscopy (AES). Contact resistance and specific contacts resistivity as low as 0.7 Omega mm and 1.1x10(-7) Omega cm(2), respectively, have been achieved by pretreatment using SiCl4 plasma followed by rapid thermal annealing at at 600 degrees C. This is compared with the case where no plasma pre-treatment was performed. Contacts without pre-treatment and annealed at at 600 degrees C were still rectifying and at the optimized annealing temperature of 800 degrees C reach 1.7 Omega mm contact resistance. Moreover, AES investigations showed that the presence of Carbon impurities on the InAlN surface has been significantly reduced after SiCl4 RIE pretreatment. That may account for improved ohmic contacts resistance and lowered optimised temperature of annealing for pre-treated contacts. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S999 / S1002

页数：4

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