Mathematical modelling processes of crystals growth CdZnTe for physical transport in inert gas

被引：0

作者：

Melnikov, AA ^{[1
]}

Kulchitsky, NA ^{[1
]}

Kulchitsky, AN ^{[1
]}

机构：

[1] Tech Univ, Moscow State Inst Radioengn Elect & Automat, Moscow, Russia

来源：

18th International Conference on Photoelectronics and Night Vision Devices | 2005年 / 5834卷

关键词：

physical vapor transport; mathematical modeling; solid solution;

D O I：

10.1117/12.628868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modeling of crystal growth processing in CdZnTe system by physical transport of solid solution components in inert gas are discussed. The model allow to calculate the composition of a single crystal of solid solution Cd1-xZnxTe, growth by physical vapor transport or the parameters of vapor phase source with the purpose of obtaining the preset composition of a single crystal of a solid solution.

引用

页码：289 / 293

页数：5