Carbon diffusion in alumina from carbon and Ti2AlC thin films

被引：12

作者：

Guenette, Mathew C. ^{[1
]}

Tucker, Mark D. ^{[1
]}

Ionescu, Mihail ^{[2
]}

Bilek, Marcela M. M. ^{[1
]}

McKenzie, David R. ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

DEPOSITION; TI;

D O I：

10.1063/1.3573490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon diffusion is observed in single crystal alpha-Al2O3 substrates from carbon and Ti2AlC thin films synthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substrate temperatures of 570 degrees C and above. The diffusion coefficient of carbon in alpha-Al2O3 is estimated to be of the order 3 x 10(-13) cm(2)/s for deposition temperatures in the 570-770 degrees C range by examining elastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriate diffusion barrier may be useful when depositing carbon containing thin films on alpha-Al2O3 substrates at high temperatures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573490]

引用

页数：5