Electroluminescence emission from light-emitting diode of p-ZnO/(InGaN/GaN) multiquantum well/n-GaN

被引：34
|
作者：
Park, Tae-Young [1 ]
Choi, Yong-Seok [1 ]
Kim, Sang-Mook [1 ]
Jung, Gun-Young [1 ]
Park, Seong-Ju [1 ]
Kwon, Bong-Joon [2 ,3 ]
Cho, Yong-Hoon [2 ,3 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
[3] Korea Adv Inst Sci & Technol, Grad Sch Nanosci & Technol WCU, Taejon 305701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期
关键词：
annealing; antimony; electroluminescence; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; P-TYPE ZNO; INGAN/GAN QUANTUM-WELLS; THIN-FILMS;
D O I：
10.1063/1.3601915
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped p-ZnO, (InGaN/GaN) multiquantum well (MQW), and n-GaN. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at 750 degrees C, showing that Sb-doped p-ZnO can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped p-ZnO layer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601915]
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页数：3
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