Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

被引：100

作者：

Heurlin, Magnus ^{[1
,2
]}

Wickert, Peter ^{[2
]}

Falt, Stefan ^{[2
]}

Borgstrom, Magnus T. ^{[1
]}

Deppert, Knut ^{[1
]}

Samuelson, Lars ^{[1
]}

Magnusson, Martin H. ^{[2
]}

机构：

[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden

[2] Sol Volta AB, S-22370 Lund, Sweden

来源：

NANO LETTERS | 2011年 / 11卷 / 05期

基金：

瑞典研究理事会;

关键词：

Nanowires; photovoltaics; doping; III-V; MOVPE; III-V NANOWIRES; HETEROSTRUCTURES; SINGLE;

D O I：

10.1021/nl2004219

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.

引用

页码：2028 / 2031

页数：4

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