Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

被引:100
作者
Heurlin, Magnus [1 ,2 ]
Wickert, Peter [2 ]
Falt, Stefan [2 ]
Borgstrom, Magnus T. [1 ]
Deppert, Knut [1 ]
Samuelson, Lars [1 ]
Magnusson, Martin H. [2 ]
机构
[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden
[2] Sol Volta AB, S-22370 Lund, Sweden
基金
瑞典研究理事会;
关键词
Nanowires; photovoltaics; doping; III-V; MOVPE; III-V NANOWIRES; HETEROSTRUCTURES; SINGLE;
D O I
10.1021/nl2004219
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.
引用
收藏
页码:2028 / 2031
页数:4
相关论文
共 21 条
  • [1] Twinning superlattices in indium phosphide nanowires
    Algra, Rienk E.
    Verheijen, Marcel A.
    Borgstrom, Magnus T.
    Feiner, Lou-Fe
    Immink, George
    van Enckevort, Willem J. P.
    Vlieg, Elias
    Bakkers, Erik P. A. M.
    [J]. NATURE, 2008, 456 (7220) : 369 - 372
  • [2] One-dimensional heterostructures in semiconductor nanowhiskers
    Björk, MT
    Ohlsson, BJ
    Sass, T
    Persson, AI
    Thelander, C
    Magnusson, MH
    Deppert, K
    Wallenberg, LR
    Samuelson, L
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (06) : 1058 - 1060
  • [3] Precursor evaluation for in situ InP nanowire doping
    Borgstrom, M. T.
    Norberg, E.
    Wickert, P.
    Nilsson, H. A.
    Tragardh, J.
    Dick, K. A.
    Statkute, G.
    Ramvall, P.
    Deppert, K.
    Samuelson, L.
    [J]. NANOTECHNOLOGY, 2008, 19 (44)
  • [4] Nanowires With Promise for Photovoltaics
    Borgstrom, Magnus T.
    Wallentin, Jesper
    Heurlin, Magnus
    Falt, Stefan
    Wickert, Peter
    Leene, Jack
    Magnusson, Martin H.
    Deppert, Knut
    Samuelson, Lars
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 1050 - 1061
  • [5] In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
    Borgstrom, Magnus T.
    Wallentin, Jesper
    Tragardh, Johanna
    Ramvall, Peter
    Ek, Martin
    Wallenberg, L. Reine
    Samuelson, Lars
    Deppert, Knut
    [J]. NANO RESEARCH, 2010, 3 (04) : 264 - 270
  • [6] Gallium arsenide p-i-n radial structures for photovoltaic applications
    Colombo, C.
    Heiss, M.
    Graetzel, M.
    Fontcuberta i Morral, A.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (17)
  • [7] GaAs Core-Shell Nanowires for Photovoltaic Applications
    Czaban, Josef A.
    Thompson, David A.
    LaPierre, Ray R.
    [J]. NANO LETTERS, 2009, 9 (01) : 148 - 154
  • [8] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
    Goto, Hajime
    Nosaki, Katsutoshi
    Tomioka, Katsuhiro
    Hara, Shinjiro
    Hiruma, Kenji
    Motohisa, Junichi
    Fukui, Takashi
    [J]. APPLIED PHYSICS EXPRESS, 2009, 2 (03)
  • [9] I-V characterization of tunnel diodes and multijunction solar cells
    Guter, Wolfgang
    Bett, Andreas W.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) : 2216 - 2222
  • [10] InAs/InP radial nanowire heterostructures as high electron mobility devices
    Jiang, Xiaocheng
    Xiong, Qihua
    Nam, Sungwoo
    Qian, Fang
    Li, Yat
    Lieber, Charles M.
    [J]. NANO LETTERS, 2007, 7 (10) : 3214 - 3218