Passivation of Ge(100)/GeO2/high-κ gate stacks using thermal oxide treatments

被引：125

作者：

Bellenger, F. ^{[1
,2
]}

Houssa, M. ^{[1
,2
]}

Delabie, A. ^{[1
]}

Afanas'ev, V. V. ^{[3
]}

Conard, T. ^{[1
]}

Caymax, M. ^{[1
]}

Meuris, M. ^{[1
]}

De Meyer, K. ^{[1
,2
]}

Heyns, M. M. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 02期

关键词：

D O I：

10.1149/1.2819626

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The physical and electrical properties of Ge/GeO2/high-kappa gate stacks, where the GeO2 interlayer is thermally grown in molecular oxygen, are investigated. The high-kappa layer (ZrO2, HfO2, or Al2O3) is deposited in situ on the GeO2 interlayer by atomic layer deposition. Detailed analysis of the capacitance-voltage and conductance-frequency characteristics of these devices provides evidence for the efficient passivation of the Ge (100) surface by its thermal oxide layer. A larger flatband voltage hysteresis is observed in HfO2-based gate stacks, as compared to Al2O3 gate stacks, which is possibly related to the more pronounced intermixing observed between the HfO2 and GeO2. (c) 2007 The Electrochemical Society.

引用

页码：G33 / G38

页数：6

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