The generation of high-density microwave plasma and its application to large-area microcrystalline silicon thin film formation

被引：36
|
作者：
Shirai, H
Arai, T
Ueyama, H
机构：
[1] Saitama Univ, Fac Engn, Urawa, Saitama 3380825, Japan
[2] Nihon Koshuha Co Ltd, Midori Ku, Kanagawa 2260011, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 9AB期
关键词：
large-area plasma; low electron temperature; high-density plasma; microwave plasma; spokewise antenna; high deposition rate; mu c-Si : H; SiH2Cl2;
D O I：
10.1143/JJAP.37.L1078
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A low-temperature, uniform, and high-density microwave plasma (2.45 GHz) is produced utilizing a spokewise antenna with no use of magnetic field. The plasma maintains a uniform state in Ar low pressure of 10 mTorr with high electron density, > 10(11) cm(-3), and temperature less than of 2.5 eV within +/-6% over a 16 cm diameter. Highly crystallized, photoconductive, hydrogenated microcrystalline silicon, mu c-Si:H film is produced from dichlorosilane (SiH2Cl2), H-2 and Ar mixture at a high deposition rate of more than 5 Angstrom/s. This plasma source has high potential not only for etching but also for the large-area firn deposition processes.
引用
收藏
页码：L1078 / L1081
页数：4
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