Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As

被引:755
作者
Akai, H [1 ]
机构
[1] Osaka Univ, Grad Sch Sci, Dept Phys, Osaka 5600043, Japan
关键词
D O I
10.1103/PhysRevLett.81.3002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Carrier-induced ferromagnetism in the doped diluted magnetic semiconductors (In,Mn up arrow,Mn down arrow, A)As, where A is As or Sn and Mn up arrow (Mn down arrow) denotes Mn atoms whose local magnetic moment is parallel (antiparallel) to the magnetization, are investigated using the Korringa-Kohn-Rostoker coherent-potential approximation and local density approximation first-principles calculation. The result shows that (i) the ferromagnetic state is stable due to the double exchange at low concentrations of A,and (ii) a spin-glass-like local-moment disordered state, which stems from the superexchange, is more favorable when the Mn d holes are nearly compensated.
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页码:3002 / 3005
页数:4
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