Photo-induced defects in MAPbBr3 single crystals

被引:11
作者
Cho, Yunae [1 ]
Jung, Hye Ri [1 ]
Jo, William [1 ,2 ]
机构
[1] Ewha Womans Univ, New & Renewable Energy Res Ctr NREC, Seoul, South Korea
[2] Ewha Womans Univ, Dept Phys, Seoul, South Korea
来源
JOURNAL OF PHYSICS-ENERGY | 2021年 / 3卷 / 04期
基金
新加坡国家研究基金会;
关键词
perovskite single crystals; CH3NH3PbBr3; defect characterization; transient photoresponse; PEROVSKITE SOLAR-CELLS; CAPACITANCE; BULK; PHOTOCURRENT; DENSITY;
D O I
10.1088/2515-7655/ac27b3
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Single crystals of hybrid organic-inorganic halide perovskite have exhibited significantly good stability and a low trap density, leading to advantageous applications in optoelectronics. Even with recent development of high-quality perovskite single crystals, a defect analysis should be addressed to improve device performance in addition to understand the interaction between photo-generated carriers and defects. In this paper, we present a photo-induced defect characterization of CH3NH3PbBr3 (MAPbBr(3)) perovskite single crystals using an interpretation of photo-current and photo-capacitance measurement. The bulk and the interfacial defect densities of MAPbBr(3) crystals with a gold electrode are examined by the characterization of photo-capacitive response under three different wavelengths of light. The transient photo-response of the single crystals reveals the occurrence of carrier trapping and a recombination process. The photo-response under the various light conditions provides a possible origin of defects in MAPbBr(3) single crystals. Our comprehensive optoelectronic analysis provides the establishment of the link between the carrier transport and device performance depending on the illuminations. The fundamental understanding of photo-induced defects in perovskites can be helpful to realize the origin of electrical loss and develop highly efficient optoelectronic devices.
引用
收藏
页数:8
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