Strong Fermi-Level Pinning in GeS-Metal Nanocontacts

被引:3
作者
Sun, Yuxuan [1 ]
Jiao, Zhen [1 ]
Zandvliet, Harold J. W. [1 ]
Bampoulis, Pantelis [1 ]
机构
[1] Univ Twente, MESA Inst Nanotechnol, Phys Interfaces & Nanomat, NL-7500AE Enschede, Netherlands
关键词
GERMANIUM SULFIDE; SEMICONDUCTOR; CONTACTS; DICHALCOGENIDES; NANOSCALE; THIN;
D O I
10.1021/acs.jpcc.2c02827
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Germanium sulfide (GeS) is a layered monochalcogenide semiconductor with a band gap of about 1.6 eV. To verify the suitability of GeS for field-effect-based device applications, a detailed understanding of the electronic transport mechanisms of GeS-metal junctions is required. In this work, we have used conductive atomic force microscopy (c-AFM) to study charge carrier injection in metal-GeS nanocontacts. Using contact current-voltage spectroscopy, we identified three dominant charge carrier injection mechanisms: thermionic emission, direct tunneling, and Fowler-Nordheim tunneling. In the forward-bias regime, thermionic emission is the dominating current injection mechanism, whereas in the reverse-bias regime, the current injection mechanism is quantum mechanical tunneling. Using tips of different materials (platinum, n-type-doped silicon, and highly doped p-type diamond), we found that the Schottky barrier is almost independent of the work function of the metallic tip, which is indicative of a strong Fermi-level pinning. This strong Fermi-level pinning is caused by charged defects and impurities.
引用
收藏
页码:11400 / 11406
页数:7
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