Electron-impact single ionization of atomic ions in the Ga isonuclear sequence

被引：0

作者：

Shaw, JA ^{[1
]}

Pindzola, MS

Steidl, M

Aichele, K

Hartenfeller, U

Hathiramani, D

Scheuermann, F

Westermann, M

Salzborn, E

机构：

[1] Centenary Coll Louisiana, Dept Phys & Engn, Shreveport, LA 71134 USA

[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[3] Univ Giessen, Inst Kernphys, D-35392 Giessen, Germany

来源：

PHYSICAL REVIEW A | 2001年 / 63卷 / 03期

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D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Theoretical distorted-wave calculations and experimental crossed-beam measurements are carried out for the electron-impact ionization of atomic ions in the Ga isonuclear sequence. For Ga+ and Ga2+ the indirect process of 3d subshell excitation followed by autoionization is calculated to make a significant contribution to the total ionization cross section near threshold. For Ga3+, Ga4+, and Ga5+ the total ionization cross section is calculated to be dominated by direct ionization of the 3d subshell. For Ga6+, Ga7+, Ga8+, and Ga9+ the indirect process of 3p subshell excitation followed by autoionization is calculated to make a sizable contribution to the total ionization cross section. The distorted-wave predictions for the Ga ions are generally confirmed by the reasonable agreement found between theory and experiment along the isonuclear sequence.

引用

页数：5

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