Intense laser field and conduction band-edge nonparabolicity effects on hydrogenic impurity states of InGaN QW

被引:2
作者
El Ghazi, Haddou [1 ,2 ]
机构
[1] CPGE My Youssef, Rabat, Morocco
[2] Fac Sci, LPS, Mexico City, DF, Mexico
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2015年 / 29卷 / 02期
关键词
InGaN; QW; binding energy; intense laser effect; nonparabolicity effect; NONLINEAR-OPTICAL PROPERTIES; APPLIED ELECTROMAGNETIC-FIELDS; 2-DIMENSIONAL ELECTRON GASES; QUANTUM-WELL; BINDING-ENERGY; HYDROSTATIC-PRESSURE; RADIATION;
D O I
10.1142/S0217979214502464
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, hydrogenic impurity ground-state binding energy in unstrained wurtzite (In, Ga)N symmetric quantum well is investigated. The heterostructure is considered under the action of an intense laser field (ILF) incorporating an additional internal probe as well as the conduction band-edge nonparabolicity effect (CBENP). The variational approach is used within the framework of single band effective-mass approximation with two-parametric 1S-hydrogenic trial wavefunction. The competition effect between internal and external perturbations is also shown. Our results reveal that the binding energy is the largest for the well width around the effective Bohr radius and is strongly influenced by both parameters. Moreover, the principle effect of ILF (CBENP) is to reduce (enhance) the binding energy. It is found that the lift of the conduction band-edge can be easily eliminated by adjusting the ILF-parameter.
引用
收藏
页数:8
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