Investigation and optimization of ultrathin Cu(In,Ga)Se2 solar cells by using silvaco-TCAD tools

被引：10

作者：

Boukortt, Nour El I. ^{[1
]}

AlAmri, Amal M. ^{[2
]}

Bouhjar, Feriel ^{[3
,4
]}

Bouhadiba, Kheira ^{[5
]}

机构：

[1] Kuwait Coll Sci & Technol, Elect & Commun Engn Dept, Rd N 7, Doha, Qatar

[2] King Abdulaziz Univ, Dept Phys, Jeddah, Saudi Arabia

[3] Al Quwayiyah Shaqraa Univ, Coll Sci & Humanities, Dept Phys, Al Quwayiyah, Saudi Arabia

[4] Res & Technol Ctr Energy, Borj Cedria Sci & Technol, Photovolta Lab, CRTEn, Hammam Lif, Tunisia

[5] Univ Mostaganem, Fac Nat & Life Sci, Dept Biol, Mostaganem 27000, Algeria

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 16期

关键词：

D O I：

10.1007/s10854-021-06661-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an investigation of ultrathin Cu (In1-xGax) Se-2 solar cell which was calibrated from the fabricated cell using Silvaco-TCAD tools. Carrier transport mechanism and conduction band alignment at the CdS/CIGS interface shows a large influence on PV parameters. The influence of the absorber trap density on the electrical characteristics of the single junction cell was investigated under AM 1.5G one-sun (100 mW/cm(2)) illumination. Further simulations quantify significant improvements in cell efficiency while using a thin Al2O3 material as a rear passivation layer. In addition, the impact of the backside pitch size, opening width, absorber layer doping, and thickness on cell performance is investigated to enhance the cell efficiency. To evaluate our work, the electrical characteristics of the optimized cell were compared to the fabricated cells.

引用

页码：21525 / 21538

页数：14

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