Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

被引：2

作者：

Kumar, Ashish ^{[1
]}

Akram, M. W. ^{[1
]}

Ghosh, Bahniman ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

来源：

AIP ADVANCES | 2012年 / 2卷 / 01期

关键词：

TRANSPORT; SEMICONDUCTORS; LOGIC; FIELD;

D O I：

10.1063/1.3694892

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D'yakonov-Perel (DP) relaxation and Elliott-Yafet (EY) relaxation are the two main relaxationmechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.3694892]

引用

页数：9

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