Valence Electronic Structure of β-FeSi2 Single Crystal Investigated by Photoelectron Spectroscopy Using Synchrotron Radiation

被引:1
作者
Ogawa, K. [1 ]
Sasaki, M. [2 ]
Ohnishi, A. [2 ]
Kitaura, M. [2 ]
Fujimoto, H. [3 ]
Azuma, J. [1 ]
Takahashi, K. [1 ]
Kamada, M. [1 ]
机构
[1] Saga Univ, Synchrotron Light Applicat Ctr, 1 Honjo, Saga 8408502, Japan
[2] Yamagata Univ, Dept Phys, Yamagata 9908560, Japan
[3] Kumamoto Univ, Fac Sci, Kumamoto 8608555, Japan
来源
ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010) | 2011年 / 11卷
关键词
beta-FeSi2; single crystal; photoelectron spectroscopy; synchrotron radiation; resonant photoemission; PHOTOEMISSION; ABSORPTION; SILICIDES;
D O I
10.1016/j.phpro.2011.01.033
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Valence electronic structure of beta-FeSi2 single crystal has been investigated by photoelectron spectroscopy using synchrotron radiation. The plate-type beta-FeSi2 single crystal has been grown by chemical vapor transport method. The surface contamination and oxide layer were removed by Ne+ ion sputtering. The dependence of the valence band spectra on exciting photon energy shows that the strong peak at the binging energy (E-Bin) of 0.5 eV and the shoulder peak at E-Bin = 8 eV are assigned to be Fe3d and Si3p orbitals, respectively. Upon the excitation of Fe2p(3/2), resonant enhancement of the valence band was observed at E-Bin = 3.7 eV, which is very similar to Fe metal. This fact suggests the existence of the two-hole satellite states from Fe3d orbitals. (C) 2010 Published by Elsevier B.V.
引用
收藏
页码:63 / 66
页数:4
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