Fabrication and characteristics of CeO2 films on Si(1 0 0) substrates by pulsed laser deposition

被引：29

作者：

Wang, RP ^{[1
]}

Pan, SH

Zhou, YL

Zhou, GW

Liu, NN

Xie, K

Lu, HB

机构：

[1] Chinese Acad Sci, Lab Opt Phys, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 200卷 / 3-4期

关键词：

CeO2; thin film; pulsed laser deposition; crystal structure; XRD; HRTEM; XPS;

D O I：

10.1016/S0022-0248(99)00058-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed investigation about the dependence of film orientation on deposition temperature and ambient oxygen pressure has been carried out for CeO2 films on Si(1 0 0) substrates using pulsed laser deposition. It has been found that the CeO2 film orientation varies with increasing oxygen pressure at 750 degrees C deposition temperature. In addition, the recovery of preferential orientation of CeO2 films grown at 20 Pa ambient oxygen pressure with increasing deposition temperature has also been found for the first time. X-ray photoelectron spectroscopy (XPS) measurements confirm that stoichiometric CeO2 films can be grown at lower oxygen pressure(similar to 5 x 10(-3) Pa). HRTEM result also indicates that the CeO2 films grown at low oxygen pressure are of high crystallinity. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：505 / 509

页数：5

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