Output Power Enhancement of Micro-Gear Sidewall Design Light Emitting Diode

被引：0
作者：
Tsai, Chun-Chin [1 ]
Cheng, Wei-Chih [1 ]
Liou, Jyun-Sian [1 ]
Chung, Cheng-Hsun [1 ]
Wang, Jimmy [1 ]
Cheng, W. H. [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan
来源：
2010 15TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) | 2010年
关键词：
GAN; CONTACTS; SURFACE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study investigates the characteristics of MGS design in LEDs and makes performance comparison between MGS and ETS designs. The light intensity of the MGS LED increased about 36% at 20mA in comparison to ETS.
引用
收藏
页码：60 / 61
页数：2
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