Energy band alignment of MgO (111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy

被引：18

作者：

Shi, K. ^{[1
]}

Zhang, P. F. ^{[1
]}

Wei, H. Y. ^{[1
]}

Jiao, C. M. ^{[1
]}

Li, C. M. ^{[1
]}

Liu, X. L. ^{[1
]}

Yang, S. Y. ^{[1
]}

Zhu, Q. S. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2012年 / 152卷 / 11期

基金：

美国国家科学基金会;

关键词：

MgO; ZnO; Polarization effect; Photoelectron spectroscopy; SPONTANEOUS POLARIZATION; PRECISE DETERMINATION; OFFSETS; GAN;

D O I：

10.1016/j.ssc.2012.03.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the MgO (111)/ZnO (0002) heterostructure. The valence band offset (VBO) was determined to be 1.22 +/- 0.23 eV and a type-I heterojunction with a conduction band offset (CBO) of 3.24 +/- 0.23 eV was obtained. The discrepancy of VBO values between MgO/ZnO and ZnO/MgO heterojunctions was mainly attributed to the internal electric field induced by spontaneous polarization effect in ZnO layer. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：938 / 940

页数：3

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