Energy band alignment of MgO (111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy

被引：18
|
作者：
Shi, K. [1 ]
Zhang, P. F. [1 ]
Wei, H. Y. [1 ]
Jiao, C. M. [1 ]
Li, C. M. [1 ]
Liu, X. L. [1 ]
Yang, S. Y. [1 ]
Zhu, Q. S. [1 ]
Wang, Z. G. [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2012年 / 152卷 / 11期
基金：
美国国家科学基金会;
关键词：
MgO; ZnO; Polarization effect; Photoelectron spectroscopy; SPONTANEOUS POLARIZATION; PRECISE DETERMINATION; OFFSETS; GAN;
D O I：
10.1016/j.ssc.2012.03.011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the MgO (111)/ZnO (0002) heterostructure. The valence band offset (VBO) was determined to be 1.22 +/- 0.23 eV and a type-I heterojunction with a conduction band offset (CBO) of 3.24 +/- 0.23 eV was obtained. The discrepancy of VBO values between MgO/ZnO and ZnO/MgO heterojunctions was mainly attributed to the internal electric field induced by spontaneous polarization effect in ZnO layer. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：938 / 940
页数：3
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