Analysis of the Diffused Front Surface Field of n-type Silicon Solar Cells with a-Si/c-Si Heterojunction Rear Emitter

被引：15

作者：

Bivour, Martin ^{[1
]}

Ruediger, Marc ^{[1
]}

Reichel, Christian ^{[1
]}

Ritzau, Kurt-U ^{[1
]}

Hermle, Martin ^{[1
]}

Glunz, Stefan W. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS) | 2011年 / 8卷

关键词：

Silicon hetero junction; rear emitter; front surfcace field; JUNCTION;

D O I：

10.1016/j.egypro.2011.06.122

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we focus on the optimization of small-area n(+)np(+) n-type silicon solar cells featuring an amorphous/crystalline silicon heterojunction (a-Si:H/c-Si SHJ) rear emitter. For cells with a locally c-Si(n(++)) diffused high-low junction underneath the front side metallization and a full-area c-Si(n(+)) diffused front surface field (FSF) in between, efficiencies of up to 20.6 % have been reached. It is shown by experiment and two-dimensional device simulation that when omitting the full-area c-Si(n(+)) FSF a sufficient two-dimensional majority carrier transport via the base to the local c-Si(n(++)) FSF can be secured. For the front side passivation of the c-Si base a stack of thermal SiO2/SiNx and Al2O3/SiNx was applied. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of SiliconPV 2011.

引用

页码：185 / 192

页数：8

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