Spectroscopic studies during pulsed laser ablation deposition of C-N films

被引:28
作者
Acquaviva, S [1 ]
Caricato, AP [1 ]
DeGiorgi, ML [1 ]
Luches, A [1 ]
Perrone, A [1 ]
机构
[1] UNIV LECCE, DEPT PHYS, INFM, I-73100 LECCE, ITALY
关键词
D O I
10.1016/S0169-4332(96)00762-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Mass and optical emission spectra were recorded during XeCl laser ablation of graphite targets in vacuo and in low pressure (up to 2.5 mbar) N-2 and NH3 atmospheres to study the role of gas phase reactions in C-N compound formation. Mass spectra were recorded during ablation in vacuo (10(-6) mbar) and in N-2 at 1 x 10(-4) mbar. In vacuo, during the first stage of ablation, the mass spectrum was characterized by the peaks at 12 and 26 amu (C and CN). The CN peak intensity was slowly decreasing with the laser pulse number, to disappear after similar to 3000 laser pulses. In contrast, the peak at 26 amu is permanent during the whole ablation when N-2 is introduced in the chamber. The optical emission spectra recorded during ablation in vacuo are dominated by the bands of the C-2 Swan system. Weak bands from CN can also be distinguished. Spectra recorded during ablation in NH3 are also dominated by the bands of the C-2 Swan system. During ablation in N-2 (10(-4)-2.5 mbar), strong bands of the CN violet system are detected. Their intensities increase with increasing N-2 pressure and, at the same pressure, with increasing laser fluence. It was observed that the N atom density recorded in the deposited C-N films is increasing with the intensity of the CN emission.
引用
收藏
页码:408 / 412
页数:5
相关论文
共 11 条
[1]   LASER ABLATION OF GE IN AN OXYGEN ENVIRONMENT - PLASMA AND FILM PROPERTIES [J].
AFONSO, CN ;
VEGA, F ;
SOLIS, J ;
CATALINA, F ;
ORTEGA, C ;
SIEJKA, J .
APPLIED SURFACE SCIENCE, 1992, 54 :175-179
[2]   REACTIVE PULSED LASER DEPOSITION OF THIN TIN FILMS [J].
CRACIUN, V ;
CRACIUN, D ;
BOYD, IW .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 18 (02) :178-180
[3]   DEPOSITION OF SIO2 BY REACTIVE EXCIMER LASER ABLATION FROM A SIO TARGET [J].
FOGARASSY, E ;
SLAOUI, A ;
FUCHS, C ;
STOQUERT, JP .
APPLIED SURFACE SCIENCE, 1990, 46 (1-4) :195-199
[4]  
Gaydon A. G., 1976, The Identification of Molecular Spectra
[5]   PLASMA DIAGNOSTICS IN PULSED-LASER TIN LAYER DEPOSITION [J].
HERMANN, J ;
THOMANN, AL ;
BOULMERLEBORGNE, C ;
DUBREUIL, B ;
DEGIORGI, ML ;
PERRONE, A ;
LUCHES, A ;
MIHAILESCU, IN .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :2928-2936
[6]   LASER REACTIVE ABLATION DEPOSITION OF NITRIDE FILMS [J].
LUCHES, A ;
LEGGIERI, G ;
MARTINO, M ;
PERRONE, A ;
MAJNI, G ;
MENGUCCI, P ;
MIHAILESCU, IN .
APPLIED SURFACE SCIENCE, 1994, 79-80 :244-249
[7]  
LUCHES A, 1996, IN PRESS P NLMI 9 IN
[8]   FORMATION OF DIELECTRIC AND SEMICONDUCTOR THIN-FILMS BY LASER-ASSITED EVAPORATION [J].
SANKUR, H ;
CHEUNG, JT .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 47 (03) :271-284
[9]  
Striganov A. R., 1968, Tables of Spectral Lines of Neutral and Ionized Atoms
[10]   REAL-TIME EMISSION-SPECTROSCOPY DURING DEPOSITION OF GERMANIUM OXIDE-FILMS BY LASER ABLATION [J].
VEGA, F ;
AFONSO, CN ;
SOLIS, J .
APPLIED SURFACE SCIENCE, 1993, 69 (1-4) :403-406