Statistical Approach to the Description of Random Pyramid Surfaces using 3D Surface Profiles

被引：10
作者：
Wefringhaus, E. [1 ]
Kesnar, C. [1 ]
Loehmann, M. [2 ]
机构：
[1] Int Solar Energy Res Ctr Konstanz, Rudolf Diesel Str 15, D-78467 Constance, Germany
[2] RENA GmbH, D-78148 Gutenbach, Germany
来源：
PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS) | 2011年 / 8卷
关键词：
Anisotropic texturing; random pyramids; topography; laser scanning microscope; distribution functions;
D O I：
10.1016/j.egypro.2011.06.114
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
3D surface profiles obtained from a variety of mono-crystalline wafers textured under different conditions were investigated. Topographical parameters taking single pyramids heights and distances into account were analysed with regard to their statistical distribution. The statistical analysis yielded appropriate distribution functions allowing for quantitative description and comparison of random pyramid surfaces. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of SiliconPV 2011.
引用
收藏
页码：135 / 140
页数：6
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