Characteristics of phase transitions in inhomogeneous silicon monoxide chromium thin films exposed to pulsed laser irradiation

被引：0

作者：

Shepelyavyi, PE ^{[1
]}

Kunets, VP ^{[1
]}

Mikhailovskaya, EV ^{[1
]}

Indutnyi, IZ ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, Kiev, Ukraine

来源：

TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 02期

关键词：

Silicon; Thin Film; Chromium; Phase Transition; Pulse Laser;

D O I：

10.1134/1.1262376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An investigation was made of the behavior of SiO/Cr cermet films of nonuniform composition exposed to pulsed laser irradiation. It is shown that radiation-stimulated surface segregation of chromium may be observed in these films and can be used for the optical recording of information. (C) 1999 American Institute of Physics. [S1063-7850(99)02002-9].

引用

页码：131 / 133

页数：3