Green Light Emitting Zn doped β-Ga2O3 Nanophosphor

被引：4

作者：

Vasanthi, V. ^{[1
]}

Kottaisamy, M. ^{[2
]}

Ramakrishnan, V. ^{[1
,3
]}

机构：

[1] Madurai Kamaraj Univ, Sch Phys, Dept Laser Studies, Madurai 625021, Tamil Nadu, India

[2] Thiagarajar Coll Engn, Dept Chem, Madurai 625015, Tamil Nadu, India

[3] Indian Inst Sci Educ & Res Thiruvananthapuram, Thiruvananthapuram 695016, Kerala, India

来源：

61ST DAE-SOLID STATE PHYSICS SYMPOSIUM | 2017年 / 1832卷

关键词：

Zn doped beta-Ga2O3; optical properties; GALLIUM OXIDE;

D O I：

10.1063/1.4980397

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The nanoparticles of Zn doped beta-Ga2O3 were synthesized by sol-gel combustion method and their structural and optical properties were investigated. The formation of ZnGa2O4 beta-Ga2O3 heterostructure by the doping of Zn ions was not affected the absorption and emission band centers, but the replacement of Ga3+ ions by the small amount of Zn2+ reduced the band gap of beta-Ga2O3. The defects (O and Ga vacancies) created in the beta-Ga2O3 nanoparticles by the doping of Zn2+ ions, which is having lesser oxidation state than that of Ga3+ ions, enhanced the intensity of green emission.

引用

页数：3

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