Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface

被引：16

作者：

Chu, Yu-Hsun ^{[1
]}

Wang, Li-Hong ^{[1
]}

Lee, Shin-Ye ^{[1
]}

Chen, Hou-Ju ^{[1
]}

Yang, Po-Ya ^{[1
]}

Butler, Christopher J. ^{[1
]}

Lu, Li-Syuan ^{[2
]}

Yeh, Han ^{[2
]}

Chang, Wen-Hao ^{[2
,3
,4
]}

Lin, Minn-Tsong ^{[1
,5
,6
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30013, Taiwan

[3] Minist Sci & Technol, TCECM, Taipei 10622, Taiwan

[4] Natl Chiao Tung Univ, Ctr Emergent Funct Matter Sci, Hsinchu 30010, Taiwan

[5] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[6] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 24期

关键词：

TRANSPORT-PROPERTIES; MONOLAYER; HETEROSTRUCTURES; GROWTH; MOS2; GAP;

D O I：

10.1063/1.5053144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. Published by AIP Publishing.

引用

页数：4

共 36 条

[1] Graphene-like silicon nanoribbons on Ag(110): A possible formation of silicene [J].