Crystal Structure, Charge Transport, and Magnetic Properties of MnSb2Se4
被引:38
作者:
Djieutedjeu, Honore
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Univ New Orleans, Dept Chem, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Djieutedjeu, Honore
[1
,2
]
Makongo, Julien P. A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Makongo, Julien P. A.
[1
]
Rotaru, Aurelian
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Rotaru, Aurelian
[1
]
Palasyuk, Andriy
论文数: 0引用数: 0
h-index: 0
机构:
N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Palasyuk, Andriy
[3
]
Takas, Nathan J.
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Takas, Nathan J.
[1
]
Zhou, Xiaoyuan
论文数: 0引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Zhou, Xiaoyuan
[4
]
Ranmohotti, Kulugammana G. S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Ranmohotti, Kulugammana G. S.
[1
]
Spinu, Leonard
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Spinu, Leonard
[1
]
Uher, Ctirad
论文数: 0引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Uher, Ctirad
[4
]
Poudeu, Pierre F. P.
论文数: 0引用数: 0
h-index: 0
机构:
Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Univ New Orleans, Dept Chem, New Orleans, LA 70148 USAUniv New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
Poudeu, Pierre F. P.
[1
,2
]
机构:
[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
[2] Univ New Orleans, Dept Chem, New Orleans, LA 70148 USA
[3] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA
[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
A single phase of MnSb2Se4 was synthesized by combining high-purity elements at 773 K. Single-crystal X-ray diffraction revealed that MnSb2Se4 is isostructural with FeSb2Se4 crystallizing in the monoclinic space group C2/m with a = 13.076(3) angstrom, b = 3.965(2) angstrom, c = 15.236(4) angstrom, beta = 115.1(2)degrees, Z = 4. MnSb2Se4 melts congruently at 790 K and is thermally stable up to 1000 K. Electronic band structure calculations, infrared diffuse reflectance spectroscopy, and low-temperature electronic transport data indicate that MnSb2Se4 is a narrow-bandgap p-type semiconductor with an energy bandgap of approximately 0.31 eV and exhibits a sharp increase in the resistivity near 230 K. A large Seebeck coefficient (S = +945 mu V K-1), high electrical resistivity (rho approximate to 9 Omega m), and low thermal conductivity (kappa = 1.4 Wm(-1) K-1) were observed at 300 K. Direct current (DC) magnetic-susceptibility measurements indicated that MnSb2Se4 is paramagnetic at 300 K and undergoes an order/disorder antiferromagnetic transition with a Neel temperature of approximately 20 K. Alternating current (AC) susceptibility at various frequencies suggested a spin-glass-like behavior.