Crystal Structure, Charge Transport, and Magnetic Properties of MnSb2Se4

被引:38
作者
Djieutedjeu, Honore [1 ,2 ]
Makongo, Julien P. A. [1 ]
Rotaru, Aurelian [1 ]
Palasyuk, Andriy [3 ]
Takas, Nathan J. [1 ]
Zhou, Xiaoyuan [4 ]
Ranmohotti, Kulugammana G. S. [1 ]
Spinu, Leonard [1 ]
Uher, Ctirad [4 ]
Poudeu, Pierre F. P. [1 ,2 ]
机构
[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
[2] Univ New Orleans, Dept Chem, New Orleans, LA 70148 USA
[3] N Carolina State Univ, Dept Chem, Raleigh, NC 27695 USA
[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
Manganese; Antimony; Selenium; Semiconductors; Magnetic properties; Thermoelectricity; NEUTRON-DIFFRACTION; PHYSICAL-PROPERTIES; MONOCLINIC MNSB2S4; BERTHIERITE; HGBI2S4;
D O I
10.1002/ejic.201100364
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A single phase of MnSb2Se4 was synthesized by combining high-purity elements at 773 K. Single-crystal X-ray diffraction revealed that MnSb2Se4 is isostructural with FeSb2Se4 crystallizing in the monoclinic space group C2/m with a = 13.076(3) angstrom, b = 3.965(2) angstrom, c = 15.236(4) angstrom, beta = 115.1(2)degrees, Z = 4. MnSb2Se4 melts congruently at 790 K and is thermally stable up to 1000 K. Electronic band structure calculations, infrared diffuse reflectance spectroscopy, and low-temperature electronic transport data indicate that MnSb2Se4 is a narrow-bandgap p-type semiconductor with an energy bandgap of approximately 0.31 eV and exhibits a sharp increase in the resistivity near 230 K. A large Seebeck coefficient (S = +945 mu V K-1), high electrical resistivity (rho approximate to 9 Omega m), and low thermal conductivity (kappa = 1.4 Wm(-1) K-1) were observed at 300 K. Direct current (DC) magnetic-susceptibility measurements indicated that MnSb2Se4 is paramagnetic at 300 K and undergoes an order/disorder antiferromagnetic transition with a Neel temperature of approximately 20 K. Alternating current (AC) susceptibility at various frequencies suggested a spin-glass-like behavior.
引用
收藏
页码:3969 / 3977
页数:9
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