Impact of processing parameters on leakage current and defect behavior of n+p silicon junction diodes

被引：6

作者：

Gramenova, E ^{[1
]}

Jansen, P ^{[1
]}

Simoen, E ^{[1
]}

Vanhellemont, J ^{[1
]}

Dupas, L ^{[1
]}

Deferm, L ^{[1
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 01期

关键词：

D O I：

10.1149/1.1391613

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study the origin of the leakage current of n(+)p diodes and the impact of process conditions on the leakage current is investigated. The influence of isolation modules, namely, conventional local oxidation of silicon (LOCOS) vs. polybuffered LOGOS, and different junction annealing conditions, namely, furnace anneal and rapid thermal anneal, on the diode leakage current is discussed. The diode leakage current level distribution over a wafer is very sensitive to specific processing steps, such as active area definition. For large peripheral diodes in p-type substrate or in p-well, the leakage current strongly depends on junction annealing conditions. The diodes processed with furnace anneal have one order of magnitude lower leakage currents compared to the diodes with rapid thermal anneal. This difference in leakage current is due to different surface generation velocities at the silicon-oxide isolation interface. (C) 1999 The Electrochemical Society. S0013-4651(98)02-067-9. All rights reserved.

引用

页码：359 / 363

页数：5

共 50 条

[21] SILICON P-N-JUNCTION ALLOY DIODES
PEARSON, GL
SAWYER, B
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351
[22] Impact of fast-neutron irradiation on the silicon p-n junction leakage and role of the diffusion reverse current
Czerwinski, A
Katchi, J
Ratajczak, J
Simoen, E
Poyai, A
Claeys, C
Ohyama, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 166 - 170
[23] p-n junction leakage in neutron-irradiated diodes fabricated in various silicon substrates
Czerwinski, A
Simoen, E
Poyai, A
Claeys, C
Ohyama, H
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 447 - 452
[24] EFFECT OF THIN OXIDE FILM ON BREAKDOWN VOLTAGE OF SILICON N+P JUNCTION
MATSUMOTO, K
HANETA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (02) : 367 - 368
[25] IMPACT OF THE SUBSTRATE ON THE LOW-FREQUENCY NOISE OF SILICON N(+)P JUNCTION DIODES
SIMOEN, E
BOSMAN, G
VANHELLEMONT, J
CLAEYS, C
APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2507 - 2509
[26] The impact of the substrate preamorphisation on the electrical performances of P+/N silicon junction diodes
Minondo, M
Boussey, J
Kamarinos, G
MICROELECTRONICS AND RELIABILITY, 1997, 37 (01): : 53 - 60
[27] P-N junction leakage current in hydrogen annealed wafer - DZ evaluation by junction leakage current
Samata, S
Ito, E
Nagura, M
Udo, Y
Kubota, H
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON, 1996, 96 (13): : 262 - 271
[28] EFFECT OF JUNCTION DEPTH ON THE PERFORMANCE OF A DIFFUSED N+P SILICON SOLAR-CELL
DHANASEKARAN, PC
GOPALAM, BSV
SOLID-STATE ELECTRONICS, 1981, 24 (12) : 1077 - 1080
[29] Current transients in almost-ideal Czochralski silicon p-n junction diodes
Poyai, A
Simoen, E
Claeys, C
APPLIED PHYSICS LETTERS, 1999, 75 (21) : 3342 - 3344
[30] THE CURRENT LEAKAGE MECHANISM IN INSB P+N DIODES
SUN, TP
LEE, SC
YANG, SJ
JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 7092 - 7097

← 1 2 3 4 5 →