Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

被引：31

作者：

Bi, Zhaoxia ^{[1
,2
]}

Lu, Taiping ^{[1
,2
,3
]}

Colvin, Jovana ^{[4
,5
]}

Sjogren, Elis ^{[6
]}

Vainorius, Neimantas ^{[1
,2
]}

Gustafsson, Anders ^{[1
,2
]}

Johansson, Jonas ^{[1
,2
]}

Timm, Rainer ^{[4
,5
]}

Lenrick, Filip ^{[6
,7
]}

Wallenberg, Reine ^{[2
,8
]}

Monemar, Bo ^{[1
,2
]}

Samuelson, Lars ^{[1
,2
]}

机构：

[1] Lund Univ, Div Solid State Phys, Dept Phys, S-22100 Lund, Sweden

[2] Lund Univ, NanoLund, S-22100 Lund, Sweden

[3] RISE Res Inst Sweden AB, S-22370 Lund, Sweden

[4] Lund Univ, NanoLund, Dept Phys, S-22100 Lund, Sweden

[5] Lund Univ, Div Synchrotron Radiat Res, Dept Phys, S-22100 Lund, Sweden

[6] Lund Univ, Dept Mech Engn, S-22100 Lund, Sweden

[7] Lund Univ, Dept Phys, NanoLund, Div Synchrotron Radiat Res, S-22100 Lund, Sweden

[8] Lund Univ, Ctr Anal & Synth NCHREM, S-22100 Lund, Sweden

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 15期

基金：

瑞典研究理事会;

关键词：

InGaN; template; vapor phase epitaxy; selective area growth; chemical mechanical polishing; micro-LEDs; SURFACE-MORPHOLOGY; GROWTH; GAN;

D O I：

10.1021/acsami.0c00951

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {10 (1) over bar1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {10 (1) over bar1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {10 (1) over bar1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.

引用

页码：17857 / 17863

页数：7

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