Fabrication and characterization of silicon nitride waveguides for mid-infrared applications

被引：3

作者：

de Oliveira, Emerson C. ^{[1
]}

Gerosa, Rodrigo M. ^{[1
]}

Phelan, Ciaran ^{[1
]}

de Matos, Christiano J. S. ^{[1
]}

机构：

[1] Univ Presbiteriana Mackenzie, MackGraphe, Sao Paulo, Brazil

来源：

2019 SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE (SBFOTON IOPC) | 2019年

基金：

巴西圣保罗研究基金会;

关键词：

silicon photonics; integrated waveguides; silicon nitride; mid-infrared; graphene plasmons;

D O I：

10.1109/sbfoton-iopc.2019.8910236

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This work describes the fabrication and characterization of silicon nitride waveguides for operation in the 2 mu m to 3 mu m range. Fabrication was carried out via PECVD and lithography techniques. Transmission losses were measured, with a tunable laser, to be similar to 20 dB between 2.0 mu m and 2.3 mu m, increasing to mu 30 dB between 2.3 mu m and 2.6 mu m. Beyond 2.8 mu m no transmission was detected, possibly due to the presence of hydrogen in the silicon nitride material (leading to absorption). Losses in the 2.0 mu m to 2.6 mu m range are believed to be a consequence of scattering, as the waveguides presented an RMS roughness of similar to 5 nm. Future work will focus on reducing these sources of absorption and scattering so that operation can be extended to the 4 mu m range.

引用

页数：4

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