Optical and Morphological Properties of Porous Silicon Grown at Low Hydrofluoric Acid Concentration by Electrochemical Anodization

被引：0
作者：
Moura, M. S. [1 ]
Costa, A. J. [1 ,2 ]
Schnitman, L. [3 ]
Fontana, M. [1 ,3 ]
机构：
[1] Univ Fed Bahia, Dept Elect Engn, Nanostruct Mat Lab, Salvador, BA, Brazil
[2] Fed Inst Bahia, Santo Amaro, Brazil
[3] Univ Fed Bahia, Ctr Technol Qualificat Ind Automat, Salvador, BA, Brazil
来源：
2015 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2015年
关键词：
Porous Silicon; Photoluminescence; Optical absorption spectrum; Quantum confinement effect; LIGHT-EMITTING-DIODES; QUANTUM CONFINEMENT; GAS SENSORS; SOLAR-CELLS; SPECTRA; FILMS; SI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work the correlation of the photoluminescence (PL) and optical absorption spectra with low concentrations of hydrofluoridic acid (HF) within the range of 0.5 up to 5.5wt% is investigated. Therefore, P-type < 100 > silicon wafers with resistivity of 7.0 Omega.cm were electrochemically etched in HF: water: ethanol mixture at different concentrations. The absorption spectra were measured from 1.25 to 3.75eV and compared with transitions of the morphological structure of porous silicon (PS). In addition, we used a Gaussian fitting procedure on the band energy structures for modeling the PS optical absorption spectrum.
引用
收藏
页数：5
相关论文
共 27 条
  • [1] Effects of surface passivation in porous silicon as H2 gas sensor
    Ali, N. K.
    Hashim, M. R.
    Aziz, A. Abdul
    [J]. SOLID-STATE ELECTRONICS, 2008, 52 (07) : 1071 - 1074
  • [2] [Anonymous], 1992, MRS P
  • [3] [Anonymous], 2005, PHYSICA E
  • [4] Modeling and gradient pattern analysis of irregular SFM structures of porous silicon
    Baroni, MPMA
    Rosa, RR
    da Silva, AF
    Pepe, I
    Roman, LS
    Ramos, FM
    Ahuja, R
    Persson, C
    Veje, E
    [J]. MICROELECTRONICS JOURNAL, 2006, 37 (04) : 290 - 294
  • [5] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [6] EFFECTS OF HYDROSTATIC-PRESSURE ON THE PHOTOLUMINESCENCE OF POROUS SILICON
    CHEONG, HM
    WICKBOLDT, P
    PANG, D
    CHEN, JH
    PAUL, W
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 11577 - 11579
  • [7] The structural and luminescence properties of porous silicon
    Cullis, AG
    Canham, LT
    Calcott, PDJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 909 - 965
  • [8] Low-porosity porous silicon nanostructures on monocrystalline silicon solar cells
    Gonzalez-Diaz, B.
    Guerrero-Lemus, R.
    Borchert, D.
    Hernandez-Rodriguez, C.
    Martinez-Duart, J. M.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2) : 215 - 218
  • [9] Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
    Iancu, V
    Ciurea, ML
    [J]. SOLID-STATE ELECTRONICS, 1998, 42 (10) : 1893 - 1896
  • [10] VISIBLE-LIGHT EMISSION-SPECTRA OF INDIVIDUAL MICROSTRUCTURES OF POROUS SI
    ITO, K
    OHYAMA, S
    UEHARA, Y
    USHIODA, S
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (17) : 2536 - 2538
123