Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2

被引：83

作者：

Jadczak, J. ^{[1
]}

Bryja, L. ^{[1
]}

Kutrowska-Girzycka, J. ^{[1
]}

Kapuscinski, P. ^{[1
]}

Bieniek, M. ^{[2
,4
]}

Huang, Y. -S. ^{[3
]}

Hawrylak, P. ^{[2
]}

机构：

[1] Wroclaw Univ Sci & Technol, Dept Expt Phys, PL-50370 Wroclaw, Poland

[2] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada

[3] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[4] Wroclaw Univ Sci & Technol, Dept Theoret Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

来源：

NATURE COMMUNICATIONS | 2019年 / 10卷 / 1期

关键词：

2-DIMENSIONAL ELECTRON-GAS; MOS2; LAYER;

D O I：

10.1038/s41467-018-07994-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Photon upconversion is an anti-Stokes process in which an absorption of a photon leads to a reemission of a photon at an energy higher than the excitation energy. The upconversion photoemission has been already demonstrated in rare earth atoms in glasses, semiconductor quantum wells, nanobelts, carbon nanotubes and atomically thin semiconductors. Here, we demonstrate a room temperature upconversion photoluminescence process in a monolayer semiconductor WS2, with energy gain up to 150 meV. We attribute this process to transitions involving trions and many phonons and free exciton complexes. These results are very promising for energy harvesting, laser refrigeration and optoelectronics at the nanoscale.

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页数：10

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