Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature

被引：158

作者：

Kasahara, Daiji ^{[1
]}

Morita, Daisuke ^{[1
]}

Kosugi, Takao ^{[1
]}

Nakagawa, Kyosuke ^{[1
]}

Kawamata, Jun ^{[1
]}

Higuchi, Yu ^{[1
]}

Matsumura, Hiroaki ^{[1
]}

Mukai, Takashi ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 07期

关键词：

QUANTUM-WELLS; DIODES;

D O I：

10.1143/APEX.4.072103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We realized room-temperature lasing of blue and green GaN-based vertical-cavity surface-emitting lasers (VCSELs), for the first time, by current injection. The blue GaN-based VCSEL had a threshold current of 1.5 mA and a threshold voltage of 3.3V under continuous-wave operation. Its maximum output power was 0.70 mW and its laser emission wavelength was 451 nm. The green GaN-based VCSEL had a threshold current of 22 mA and a threshold voltage of 6.3V under pulsed current operation. Its maximum output power was estimated to be over 0.80 mW and the laser emission wavelength was 503 nm. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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