Spin effects in magnetotransport of an n-InxGa1-xAs/GaAs double quantum well under parallel magnetic fields

被引：0

作者：

Yakunin, MV ^{[1
]}

Alshanskii, GA ^{[1
]}

Arapov, YG ^{[1
]}

Harus, GI ^{[1
]}

Neverov, VN ^{[1
]}

Shelushinina, NG ^{[1
]}

Zvonkov, BN ^{[1
]}

Uskova, EA ^{[1
]}

de Visser, A ^{[1
]}

Ponomarenko, L ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Met, Ekaterinburg 620219, Russia

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In a magnetic field configured parallel to the layers of the n-InxGa1-xAs/GaAs double quantum well, peculiarities are revealed in the magnetoresistance (MR) caused by passing of the tunnel gap edges through the Fermi level. Shown is that to reach coincidence of the calculated MR maximum position with the corresponding experimental one, spin splittings in the energy spectrum should be considered, and only the lower spin-split subband manifests in the experiment while the peculiarity due to the upper one is suppressed because of its lower population and vanishing probability of the spin-flip transitions. Spin splittings definitely manifest in the same samples in the quantum Hall effect.

引用

页码：1003 / 1004

页数：2

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