Thermionic emission cooling in single barrier heterostructures

被引：87

作者：

Shakouri, A ^{[1
]}

LaBounty, C

Piprek, J

Abraham, P

Bowers, JE

机构：

[1] Univ Calif Santa Cruz, Jack Baskin Sch Engn, Santa Cruz, CA 95064 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.122960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonisothermal transport in InGaAsP-based heterostructure integrated thermionic coolers is investigated experimentally. Cooling on the order of a degree over 1 mm thick barriers has been observed. This method can be used to enhance thermoelectric properties of semiconductors beyond what can be achieved with the conventional Peltier effect. (C) 1999 American Institute of Physics. [S0003-6951(99)02701-1].

引用

页码：88 / 89

页数：2

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